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AS ISO 17560-2006 PDF
$87.97
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Adopts ISO 17560:2002 to specify a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon and using stylus profilometry or optical interferometry for depth scale calibration.
| Published | 20/10/2006 |
|---|---|
| Pages | 10 |
